Characterization of Oxynitride Dielectric Films Grown in Nitric Oxide:Oxygen Mixtures by Rapid Thermal Oxynitridation

摘要

As device geometries shrink to sub-micron size,gate dielectrics must be scaled accordingly.Ultrathin oxides (<4 nm) have demonstrated good electrical reliability and performance but they are vulnerable to increased gate leakage from direct tunneling and increased penetration from boron and other mobile ions.