Low Dielectric Constant Material Deposited by HDPCVD for Barrier and Etch Stop Application in Cu Damascene Structure

摘要

We have investigated barrier low dielectric constant film,a-Si,C:H,deposited in a single-wafer High Density Plasma Chemical Vapor Deposition,HDP-CVD,chamber.We first report development of HDP-CVD a-Si,C:H in this study.HDP-CVD a-Si,C:H demonstrated capability for good barrier/etch stop in 1OW-kappa copper damascene applications.The film has a dielectric constant of-4.2 which is lower than the dielectric constant of plasma silicon nitride(kappa approx 7).