Aspects of Gas Phase Chemistry During Chemical Vapor Deposition of Ti-Si-N Thin Films with Ti(NMe_2)_4 (TDMAT),NH_3,and SiH_4

摘要

Ti-Si-N is a refractory amorphous ternary nitride which is a promising candidate for diffusion barrier applications in future metallization schemes of integrated circuits.One chemical vapor deposition (CVD) process for Ti-Si-N films uses the Ti(NR_2)_4 (R = Me or Et),NH_3,and SiH_4 precursor system and enables deposition at temperatures below 450 deg C,which is low enough for microelectronics applications.