Buffer layers for narrow bandgap A-sige solar cells

摘要

In high efficiency narrow bandgap (NBG) a-SiGe solar cells, thin buffer layers of unalloyed hydrogenated amorphous silicon (a-Si) are usually used at the interfaces between the a-SiGe intrinsic layer and the doped layers. We investigated theeffect of inserting additional a-SiGe interface layers between these a-Si buffer layers and the a-SiGe absorber layer. We found that such additional interface layers increase solar cell V{sub}(oc) and FF sizably, most likely due to the reduction orelimination of the abrupt bandgap discontinuity between the a-SiGe absorber layer and the a-Si buffer layers. With these improved narrow bandgap solar cells incorporated into the fabrication of triple-junction a-Si based solar cells, we obtained triplecells with initial efficiency of 10.6%.