Kinetics of the interaction of atomic species with (100) gallium arsenide surfaces

摘要

The interactions of atomic hydrogen, deuterium and sulfur with (100) GaAs surfaces have been studied. The atoms were produced in a remote microwave plasma and their effect on carrier recombination velocities was continuously monitored in situ bythe change in photoluminescence intensity (PLI). It was observed that the PLI increased by about 1-2 orders of magnitude following a few seconds exposure to hydrogen and deuterium atoms. A subsequent treatment with sulfur atoms further increased the PLI. A kinetic analysis of the room temperature hydrogen atom interactions with the (100) GaAs surface was attempted. A similar behavior was observed at higher temperatures when hydrogen and deuterium atoms were allowed to interact with a Si/SiO2 interface. Acomparison of the two systems leads us to conclude that the hydrogen and deuterium atoms can be trapped at interstitial sites near these interfaces. The kinetics of the hydrogen atom loss from these semiconductors is presented and analyzed in terms of adistribution of trapping sites.