Synthesis of III-N{sub}x-V{sub}(1-x) thin films by N ion implantation

摘要

Dilute III-N{sub}x-V{sub}(1-x) alloys were successfully synthesized by nitrogen implantation in GaAs and InP. The fundamental band gap energy for the ion beam synthesized III-N{sub}x-V{sub}(1-x) alloys was found to decrease with increasing N implantation dose in a manner similar to that commonly observed in epitaxially grown GaN{sub}xAs{sub}(1-x) and InN{sub}xP{sub}(1-x) thin films. The fraction of N occupying anion sites ("active" N) in the GaN{sub}xAs{sub}(1-x) layers formed by N implantation was thermally unstable and decreased with increasing annealing temperature. In contrast, thermally stable InN{sub}xP{sub}(1-x) alloys with N mole fraction as high as 0.012 were synthesized by N implantation in InP. Moreover, the N activation efficiency in InP was at least a factor of two higher than in GaAs under similar processing conditions. The low N activation efficiency (<20%) in GaAs can be improved by co-implanting Ga and N in GaAs.