Deffect generation by proton irradiation of semi-insulating LEC GaAs

摘要

High energy and high fluence proton irradiated semi-insulating GaAs has been studied by EBIC,PL mapping,C-V,NTSC,PICTS and p-DLTS.The main defects generated by the irradiation were analyzed.An EL2-like defect was found to be dominant.The generation of this defect annihilates the typical cellular distribution of EL2 in as-grown material.The generated El2 defects present a differnet photoquenching behavior than the as-grown EL2 defects.