The effect of doping on the energy distribution of localized states and carrier transport in disordered organic semiconductors

摘要

Doping of a disordered organic semiconductor gives rise to additional energy disorder due to the Coulomb interaction between randomly distributed dopant ions and carriers localized in intrinsic hopping sites.Although the carrier density increases with increasing doping level the additional energy disorder can significantly reduce the carrier hopping mobility.At higher doping levels the filling of deep states takes over,which leads to steeply increasing mobility at high dopant concentrations.