首页> 外文会议>Materials Research Society Symposium >PbZr{sub}0.53Ti{sub}0.47O{sub}3 (PZT) thin films on la{sub}0.5Sr{sub}0.5CoO{sub}3 (LSCO) bottom electrodes prepared by chemical solution deposition and annealed at different temperatures
【24h】

PbZr{sub}0.53Ti{sub}0.47O{sub}3 (PZT) thin films on la{sub}0.5Sr{sub}0.5CoO{sub}3 (LSCO) bottom electrodes prepared by chemical solution deposition and annealed at different temperatures

机译:Pbzr {sub} 0.53Ti {sub} 0.470 {sub} 3(pzt)薄膜在La {sub} 0.5sr {sub} 0.5coo {sub} 3(LSCO)底部电极通过化学溶液沉积制备并在不同的情况下退火温度

获取原文

摘要

PbZr{sub}0.53Ti{sub}0.47O{sub}3 (PZT) films on La{sub}0.5Sr{sub}0.5CoO{sub}3 (LSCO)/Pt electrodes crystallize in the perovskite phase at 550°C. Cross section SEM shows a columnar grain structure of PZT films on fine-grained LSCO. The ferroelectric response of the heterostructures depends on the annealing temperature of the LSCO layer. The remanent polarization and coercive field of the PZT annealed at 550°C deposited on LSCO annealed at 800 °C are 25 μC/cm{sup}2 and 99 kV/cm respectively, comparable to the values obtained for PZT films on platinized silicon substrate.
机译:PBZR {Sub} 0.53Ti {Sub} 0.470 {Sub} 3(PZT)薄膜在La {sub} 0.5SR {Sub} 0.5CoO {Sub} 3(LSCO)/ Pt电极在550°C时在钙钛矿相中结晶。 SEM横截面显示出精细晶粒LSCO上PZT薄膜的柱状晶粒结构。异质结构的铁电响应取决于LSCO层的退火温度。在800℃下沉积在LSCO上的550℃下退火的PZT的倒置偏振和矫顽磁场分别为25μC/ cm {sup} 2和99kV / cm,与镀铂硅衬底上的PZT薄膜获得的值相当。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号