Low Temperature PEVCD Silicon Oxide For Devices And Circuits On Flexible Substrates

摘要

The aim of this research is to develop low temperature gate dielectric/passivation layer for muc-Si and poly-Si based devices and circuits compatible with plastic substrates.The PEVCD silicon oxide films were fabricated from mixture of silane and nitrous oxide at 250 deg C,120 deg C and 75 deg C.Helium,arogn and nitrogen were used as diluent gases to optimize density,stress,uniformity,and electronic properties.