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Effects of substrates roughness on c-axis preferred orientation of ZnO films deposited by rf magnetron sputtering

机译:基质粗糙度对RF磁控溅射沉积ZnO膜C轴优选取向的影响

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We investigated the effect of substrate surface roughness on c-axis preferred orientation of ZnO films deposited by radio frequency (rf) magnetron sputtering. We used as substrates a bare Si(100), evaporated Au/Si(100), evaporated A1/Si(100), and sputtered Al/Si(100), of which rms roughness by atomic force microscope (AFM) were 0.127, 1.71, 2.11, and 6.5~11.8 nm, respectively. The crystallinity and the c-axis preferred orientation of ZnO films strongly depended on the surface roughness of the used substrates.
机译:我们研究了基材表面粗糙度对射频(RF)磁控溅射沉积的ZnO膜的C轴优选取向的影响。我们用作基板裸SI(100),蒸发的Au / Si(100),蒸发的A1 / Si(100),并溅射的Al / Si(100),其中由原子力显微镜(AFM)的RMS粗糙度为0.127, 1.71,2.11和6.5〜11.8 nm。 ZnO膜的结晶度和C轴优选取向强烈地依赖于所用基材的表面粗糙度。

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