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Observation of structural modulations and formation of H-carbides and zeta-silicides during alpha_2->gamma transformation in fully lamellar gamma-TiAl

机译:α2->γ->γγγγ转化期间观察结构调节及H碳化物和Zeta-硅化物

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The present paper illustrates the experimentally observed microstructures related to alpha_2->gamma + Ti_2AlC (H-carbide) and Ti_5Si_3 (zeta silicide) phase transformations in fully lamellar Ti-46Al-2Cr-3Nb-0.2W-0.2Si-0.1C alloy. These transformations were observed by in-situ heat treatments in the TEM at temperatures up to 800 deg C and by post heat treatment examination in a high-resolution transmission electron microscope. alpha_2 dissolution was observed to start both inside the lath and at the alpha_2/gamma interface. H-type carbides were observed to nucleate inside the alpha_2 lath, which explains the appearance of long arrays of well-aligned structures along prior alpha_2 laths in creep-deformed samples. zeta silicide precipitates nucleate at the alpha_2/gamma interface, this growth occurs epitaxially along the pre-existing <0001alpha_2 direction. Modulated structures were observed during the alpha_2->H, newly formed gamma and at the alpha_2/zeta interface. All these modulated structures consist of regular arrangement of stacking faults and dislocations.
机译:本文说明了完全层状Ti-46Al-2Cr-3NB-0.2W-0.2SI-0.1C合金中的实验观察到与α_2->γ-γ+ Ti_2ALC(H-碳化物)和Ti_5SI_3(Zeta硅化物)相转化相关的微观结构。通过在高达800℃的温度下,在高达800℃的温度下,在高分辨率透射电子显微镜中进行热处理检查,观察到这些转化。观察到α_2溶解以在板条内部和α_2/γ接口开始。观察到H型碳化物对α_2板条内的核心,这解释了沿着蠕变变形样品中的先前α_2板条沿先前的α_2板条的长阵列的长阵列的外观。 Zeta硅化物在α_2/γ接口处沉淀成核,这种生长沿着预先存在的<0001 α_2方向外延发生。在α_2-> H,新形成的γ和α/ Zeta界面处观察到调制结构。所有这些调制结构包括堆叠故障和脱位的规则排列。

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