Electron-beam-induced reactivation of Si dopants in hydrogenated and deuterated 2D AlGaAs heterostructures.Application to the fabrication of nanostructures

摘要

Hydrogen incorporation in n-type Si-doped GaAs epilayers is now a well-known process.This paper is devoted to the study of the stability of SiH (SiD) complexes when submitted to an electron beam in n-type Si-doped GaAs epilayer and also in 2D-AlGaAs heterostructures exposed to a hydrogen or deuterium plasma.