DEPOSITION FEEDSTOCK AND DOPANT MATERIALS USEFUL IN THE FABRICATION OF HYDROGENATED AMORPHOUS SILICON ALLOYS FOR PHOTOVOLTAIC DEVICES AND OTHER SEMICONDUCTOR DEVICES

摘要

ABSTRACTCompounds having the formula (MX3)n M'X4n wherein M and M'are different Group 4A atoms selected from the group ofsilicon, germanium and lead, one of M and M' is silicon, X ishydrogen, halogen or mixtures thereof, and n is an integerbetween 1 and 4, inclusive, are useful as deposition feedstockmaterials in the formation of hydrogenated amorphous siliconalloys useful in the fabrication of photovoltaic and otherelectronically active devices. Dopants having the formula(SiX3)m L X3-m wherein L is a Group 5A atom selected from thegroup of phosphorus, arsenic, antimony and bismuth, X ishydrogen, halogen or mixtures thereof and m is an integerbetween 1 and 3, inclusive, are useful in the fabrication ofnegatively-doped hydrogenated amorphous silicon alloys usefulin the fabrication of photovoltaic and other electronicallyactive devices. Dopants having the formula YJX2 wherein Y ishalogen or carbonyl, J is a Group 3A atom and X is hydrogen,halogen or mixtures thereof, are useful in the formation ofpositively-doped hydrogenated amorphous silicon alloys usefulin the fabrication of photovoltaic and other electronicallyactive devices.-1-