Low k integration issues for 0.18 mu M devices

摘要

The microelectronics industry has accumulated considerable experience using spin on polymers such as methyl silsesquioxane (MSQ) and hydrogen silsesquioxane (HSQ). The requirements for low k materials for 0.18 mu m and beyond devices has resulted in renewed interest in these materials. These materials will be the most likely candidates for integration into the 0.18 mu m devices considering the large accumulated knowledge in using these materials in the previous generations and also due to the fact that other purely organic materials and aerogels have far more formidable challenges to surmount before they can be successfully integrated. Vapor deposited low k material based on methyl silane and hydrogen peroxide chemistry can be considered similar to MSQ. In this paper process integration challenges involved in incorporating these spin on materials and the vapor deposited material into 0.18 mu m devices in non etch back mode are presented.