Comparative study of damage production in ion implanted III-V-compounds at temperatures from 20 to 420 K

摘要

The damage evolution in ion implanted InP, GaAs, GaP and InAs is studied as a function of the ion fluence in the temperature range 20-420 K using various ion masses. It is shown that the macroscopic behaviour can be described in terms of critical temperatures T_c which depend on the ion mass and on the dose rate for a given material. At temperature T_1