Investigation of properties of porous silicon embedded with ZnSe and CdSe

摘要

Three-dimensional arrays of a few nanometer size clusters have been realized using a porous silicon (PS) matrix by filling its pores with CdSe or ZnSe. From the photoluminescence behavior it is concluded that the average size of the CdSe, ZnSe clusters is about 3-5 nm. We compare the PL and Raman scattering spectra of the pure PS area of samples with those obtained from the embedded areas on the same wafer. The results are consistent with the stabilization of the PL peak in the case of CdSe in spite of the different PL peak positions of the pure PS. PL spectra of the PS were examined as function of laser irradiation time and laser intensities. direct c 1999 Elsevier Science B.V. All rights reserved.