Stability and quantum efficiency of a novel type of a-Si:H/a-SiC:H based UV detector

摘要

UV detectors based on a-Si:H/a-SiC:H were deposited by plasma enhanced chemical vapor deposition and characterized in terms of their photoelectrical properties. A quantum efficiency of 90%, corresponding to 0.28 A/W, at 365 nm was measured for devices having p-layer and i-layer thickness less than 10 nm. A good uniformity (15%) was achieved on area of 5 * 5 cm. A linear dependence of the photocurrent as a function of impinging photon flux, corresponding to a constant responsivity, was found. Aging experiments were performed by UV irradiation both on devices and on thin films inserted in the detectors with the aim of investigating the possible correlations.