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Mixed Signal Hybrid OEICs: AnP I-MSM Integrated Onto a CMOS Analog Optical Receiver with a Digital CMOS Microprocessor

机译:混合信号混合OEIC:ANP I-MSM集成到带有数字CMOS微处理器的CMOS模拟光接收器上

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One avenue to the use of optics in computing is the integration of optoelectronic (OE) devices and circuits. Access to VLSI CMOS circuitry is key for the realization of systems which can perform highly complex processing tasks. Using hybrid integration of OE devices with CMOS VLSI, one exciting prospect for optics is that of optical interconnect for connecting high speed digital processors, since conventional wire based interconnect and packaging technologies are reaching limits of both speed and packing density [1]. To realize the integration of OE with CMOS VLSI, however, analog OE interface circuits must operate in the presence of digital signal processing circuitry, which produce digital noise. Sensitive CMOS receivers [2-9] have not been demonstrated operating next to a running microprocessor, and, in the noisy digital microprocessor environment, noise levels of hundreds of millivolts with picosecond rise times are not uncommon, which significantly negatively impact receiver operation. In this paper, a fully differential CMOS receiver designed to operate in a noisy digital microprocessor environment is examined. This receiver has been fabricated on the same CMOS die next to a SIMD microprocessor for test in a noisy digital environment. This receiver has been hybrid integrated with an inverted metal-semiconductor-metal (I-MSM) photodetector, and operation of the integrated receiver has been demonstrated with a bit error rate (BER) of at least 10~(-9) in the noisy digital microprocessor environment.
机译:在计算中使用光学器件的一个大道是光电(OE)器件和电路的集成。访问VLSI CMOS电路是实现可以执行高度复杂的处理任务的系统的键。使用具有CMOS VLSI的OE器件的混合集成,光学器件的一个令人兴奋的前景是连接高速数字处理器的光学互连,因为传统的基于导线的互连和包装技术达到速度和填充密度的限制[1]。然而,为了实现与CMOS VLSI的OE集成,模拟OE接口电路必须在数字信号处理电路的存在下操作,这产生数字噪声。敏感的CMOS接收器[2-9]尚未在运行的微处理器旁边进行操作,并且在嘈杂的数字微处理器环境中,具有PICOSECOND升高时间的数百毫伏的噪声水平并不罕见,这显着产生负面负面影响。在本文中,检查了旨在在嘈杂的数字微处理器环境中运行的全差分CMOS接收器。该接收器已经在SIMD微处理器旁边的相同CMOS模具上制造,用于在嘈杂的数字环境中进行测试。该接收器已经与倒金属 - 半导体 - 金属(I-MSM)光电探测器集成的混合动力士,并且已经在噪声中以至少10〜(--9)的比特错误率(BER)对集成接收器的操作进行了说明数字微处理器环境。

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