A Novel Method to utilize Existing TCAD Tools to Build Accurate Geometry Required for MEMS Simulation

摘要

This paper details a technique that exploits domain decomposition and utilizes a combination of 1-D, 2-D, and 3-D process simulation to build physically accurate geometry of micro-electro-mechanical systems (MEMS) for simulation. The size and aspect ratios of typical MEMS structures differ significantly from those traditionally found in the VLSI community. This spatial stiffness makes it difficult to construct a geometry model using standard process simulation tools. The domain decomposition technique is an automated process that uses process flow, mask layouts, and a set of heuristics to determine which regions on the wafer require 1-D, 2-D, and 3-D simulation. The appropriate order of simulation is then performed and the results are automatically combined to create a useful geometry which can be used for simulation of behavior.