TCAD simulations and accurate extraction of reliability-aware statistical compact models

摘要

In this paper, we focus on the TCAD simulation and accurate compact model extraction of the time evolution of statistical variability in conventional (bulk) CMOS transistors, due to bias temperature instability (BTI). The 25-nm physical gate length MOSFETs, typical for 20 nm bulk CMOS technology, are used as test-bed transistors to illustrate our approach. Statistical physical simulations of fresh devices and devices at initial, middle and final stages of BTI degradation are performed and the corresponding nominal and statistical compact models are extracted using a two-stage extraction strategy. The extracted compact models not only accurately capture time evolution of the statistical distribution of the key MOSFET figures of merit, but also the complex correlations between them. An excellent agreement with the original physical TCAD simulation results provides a high degree of confidence that the extracted compact models deliver accurate representation of the operation of each device for the purposes of reliable circuit simulation and verification.