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Localized Microwave Measurement using AFM-Compatible Scanning Near-field Microwave Microscope Cantilever with Ultra-tall Coaxial Probe

机译:局部微波测量使用AFM兼容的扫描近场微波显微镜悬臂,具有超高高同轴探针

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Near-field scanning microwave microscopy (SNMM) continues to be developed since its first demonstration in 1972 [1]. SNMM is attractive because it offers a non-invasive method for localized material measurement [2]. Coaxial near-field probes with a tapered protruding center conductor are good candidates for SNMM, in part because they reduce far-field effects [2-4]. The short tip height (~10 μm) of currently available SNMM coaxial probes, however, involves an unwanted electromagnetic interaction between the chip body and the sample, resulting in parasitic capacitance [4-6]. One way to decrease this parasitic capacitance and to achieve a more localized measurement is to use taller tips. To demonstrate this approach, we have designed and fabricated ultra-tall coaxial tips (having heights up to 50 μm) and integrated them with the cantilever and a coplanar waveguide (CPW), as shown in Fig. 1 [4,7]. Here, we present the first results from simultaneous SNMM and AFM measurements using these probes.
机译:近场扫描微波显微镜(SNMM)继续,因为在1972年[1]其第一示范有待开发。 SNMM是有吸引力的,因为它提供用于局部材料测量[2]的非侵入性方法。有锥形突出中心导体同轴电缆的近场探头是SNMM的良好候选,部分是因为它们降低远场作用[2-4]。短尖端高度当前可用SNMM同轴探针(〜10微米),但是,涉及到芯片本体和所述样品之间的不希望的电磁相互作用,产生寄生电容[4-6]。减少这种寄生电容和实现更局部测量的方法之一是使用更高的技巧。为了证明这种方法,我们设计并制造的超高同轴提示(具有高度达50微米),并与悬臂和共面波导(CPW)集成它们,如图1中所示[4,7]。这里,我们提出从同时SNMM和使用这些探针AFM测量所述第一结果。

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