RADIATION INDUCED BEHAVIOR IN MOS DEVICES

机译：辐射诱导MOS装置的行为

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The postradiation response of the investigated MOS structures consists of the relaxation process due to "slow" interface states of donor type. The appearance of these states is caused by the capture of radiation-induced holes nearby the oxide-semiconductor interface. A mathematical model of reversible charge relaxation phenomenon is offered. Model predictions fits well to the obtained thermal-field relaxation dependences.

机译：所研究的MOS结构的缓和响应包括由于施主式的“慢”界面状态而导致的松弛过程。这些状态的外观是由氧化物 - 半导体界面附近的辐射诱导的孔引起的。提供了可逆收费放松现象的数学模型。模型预测适合获得的热场弛豫依赖性。

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《NATO advanced research workshop on fundamental aspects of ultrathin dielectrics on si-based devices : Towards an atomic scale understanding》|1998年||共6页
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RADIATION INDUCED BEHAVIOR IN MOS DEVICES

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