In this paper we consider the potential of positrons for the study of defects in the MOS system. After a brief introduction on the fundamentals of the transport and annihilation of positrons in solids, we will deal with the techniques to drive the positrons towards the Si/SiO_2 interface. To illustrate the nature of the information obtained from positron experiments, we discuss experimental results that reveal a correlation between the positron annihilation data and the generation rate of interface state due to hydrogen release. We will also deal with the prospects of positron studies to provide more detailed information on the chemical nature and microscopic structure of defects.
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