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Dislocation-based models of stress-strain behavior in multilayered thin films

机译:基于错位的多层薄膜应力 - 应变行为模型

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Elementary dislocaiton arrays are applied to multilayered thin films to predict the critical stress required to propagate dislocation loops within individual layers and to study the tendency for deformation to be uniform or localized. The analyses suggest that shearing normal to layers is a mechanically unstable, softening process while stretching parallel to layers produces substantial hardening. Further, films with smaller layer thickness, h. require larger plastic strains to initiate pile-up modes of slip. Although the initial stress required to propagate an isolated loop within a single layer scales as In(h)/h, there is a minimum h below which the critical stress is predicted to depend only on the resistance of the interface to dislocation transmission.
机译:基本的异托隆阵列应用于多层薄膜,以预测在各个层内传播位错环所需的临界应力,并研究变形均匀或局部化的趋势。分析表明,剪切正常到层是机械不稳定的,软化过程,同时平行地拉伸到层产生大量的硬化。此外,具有较小层厚度的薄膜h。需要较大的塑料菌株来启动堆积的滑动模式。尽管在单层尺度内传播隔离环的初始应力,但是在(H)/ h中,下面存在最小H,因此预测临界应力仅取决于接口的阻力到位传输。

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