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Nanoindentation of atomically modified surfaces

机译:原子修饰表面的纳米凸缘

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Nanoindentation studies on metal and semiconducting surfaces often display excursions in the load-displacement curves. These displacement excursions have been attributed to phase transitions, oxide breakthrough, surface contamination effects, and dislocation nucleation under the indenter tip. We have shown recently that displacement excursions were present for nanoindentation on single crystal Au(111), (110) and (100), and were attributed to dislocation nucleation since all other phenomena were ruled out. We present our recent results that have been aimed at understanding the effects of surface modification at the nanoscale on dislocation nucleation. The effects of modifying the Au surface with electrochemically deposited metal monolayers (Pb and Ag), with an electrochemically deposited oxide monolayer and an electrochemically reconstructed surface will be presented. Hardness differences as great as a factor of 3 have been observed for these surfaces. These experiments are unique in that they were carried out under electrochemical control where strict control of the surface cleanliness can be maintained.
机译:金属和半导体表面的纳米凸缘研究通常在负载 - 位移曲线中显示偏移。这些位移偏移被归因于相变,氧化物突破,表面污染效应和压印尖端下的位移成核。我们最近表明,在单晶Au(111)上的纳米indentation存在位移偏移,(110)和(100),并且由于所有其他现象被排除出来而归因于位移成核。我们展示了我们最近的结果,这些结果旨在了解表面改性在纳米级纳米级成核的影响。将呈现用电化学沉积的金属单层(Pb和Ag)改变Au表面的效果,其中将呈现电化学沉积的氧化物单层和电化学重建表面。对于这些表面,已经观察到硬度差异大大。这些实验是独一无二的,因为它们在电化学控制下进行,其中可以保持对表面清洁度的严格控制。

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