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Reversible plasticity under nanoindentation of atomically flat and stepped surfaces of fcc metals

机译:fcc金属原子平坦和阶梯状表面的纳米压痕下的可逆塑性

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Using atomistic simulation, the indentation of single-crystalline Cu is investigated for both an ideal and a stepped (111) surface. Both systems exhibit an intermediate regime of reversible plasticity, characterized by the formation of extended stacking faults, which heal entirely upon withdrawal of the indenter. This regime can be employed to clarify the role of pure stacking fault generation and cross-slip in plasticity. Its existence reveals that, on the atomistic scale, plastic deformation is characterized by material transport rather than by the nucleation of stacking faults. Finally, we establish a criterion - based on the total displacement of particles - to determine after which indentation depth plasticity is generated irreversibly in the material.
机译:使用原子模拟,研究了理想表面和台阶表面(111)的单晶Cu压痕。两种系统均表现出可逆可塑性的中间状态,其特征是形成了扩展的堆垛层错,这些缺陷在压头撤回后即可完全治愈。可以采用这种机制来阐明纯堆垛层错的产生和交叉滑动在可塑性中的作用。它的存在表明,在原子尺度上,塑性变形的特征在于物质的输送而不是堆垛层错的形核。最后,我们基于颗粒的总位移建立一个标准,以确定在此之后在材料中不可逆地产生压痕深度可塑性。

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