A method for tensile tetsting thin films at elevated temepratures is presented. Free-standing tensile specimens were prepared by evaporating 2.1 mu m of gold onto a patterned oxidized silicon wafer. Tensile tests were performed at various temperatures up to 600 deg C. The ultimate tensile strengths of the films decreased as temeprature increased, and ductility increased with increasing temperature. Films tested at high temepratures (>=400 deg C) exhibited significant strain rate-dependence, while films tested at low temperatures (,=200 deg C) were found to be virtually rate-independent. At higher temperatures and strain rates, stress-enhanced grain growth was observed.
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