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The Effect of Elastic Strain on the Electrical and Magnetic Properties of Epitaxial Ferromagnetic SrRuO_3 Thin Films

机译:弹性应变对外延铁磁性Srruo_3薄膜电磁性和磁性的影响

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We report the direct measurement of elastic straineffect on the electrical and magnetic properties of single domainepitaxial SrRuO_3 thin films, using a lift-off technique. The as-grown films on vicinal (001) SrTiO_3 substrates are subjected toelastic biaxial compressive strain within the plane and tensilestrain normal to the plane. In contrast, the lift-off films preparedby chemical etching of SrTiO_3 substrates, are completely strainfree with bulk like lattice. Our measurements indicate that theelastic strain can significantly affect the electrical and magneticproperties of epitaxial ferromagnetic SrRuO_3 thin films. Forthe strained films, the Curie temperature (T_c) was suppressedto 150K and the saturation magnetic moment (M_s) wasdecreased to 1.15 #mu#/Ru atom as compared to a T_c of 160Kand M_s of l.45#mu#/Ru atom for the strain free films. Theseproperty changes are attributed to the structural distortion due tothe elastic strain in the as-grown epitaxial thin films. Our resultsprovide direct evidence of the crucial role of lattice strain indetermining the properties of the perovskite epitaxial thin films.
机译:我们用剥离技术报告了弹性应变效应的直接测量单个导孔Srruo_3薄膜的电气和磁性性能。在vicinal(001)srtio_3基板上的生长膜在平面内进行了木质双轴压缩菌,并且垂直于平面。相反,剥离薄膜制备的SRTIO_3衬底的化学蚀刻,是完全菌壳的块状如晶格。我们的测量表明,特弹性应变会显着影响外延铁磁Srruo_3薄膜的电气和磁力。 :l,应变片,居里温度(T_C)为150K suppressedto和饱和磁矩(M_S)wasdecreased〜1.15#亩#/钌原子相比/的1.45#亩#160Kand M_S为汝原子的T_C作为菌株自由薄膜。这些伪装的变化归因于由于生长的外延薄膜的弹性应变为归因于所得的结构失真。我们的结果提供了晶格菌株的关键作用的直接证据,不确定钙钛矿外延薄膜的性质。

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