Electroluminescence study of Si-Si_1-x/Si_1-yC_y-Si p-i-n diode structures

摘要

The electroluminescence from p-i-n diode structures with Si_1-yC_y/Si_1-xGe_x layers in the depletion region has been studied. Emission attributed to an overlap of the wavefunction associated with electrons confined in the Si_1-xC_y layer and the wavefunction associated with holes confined in the Si_1-xGe_x layer has been observed. For low injection currents, emission due to recombination occurring in the Si_1-xGe_x layer is more dominant. For structures with higher C concentration, the interface related emission can persist up to higher temperatures.