Effect of high concentrationof defect states at PS/c-Si heterointerfacer on transport properties of Al/PS/c-Si photodiode structure

机译：PS / C-Si异化表面高浓度缺陷态对Al / PS / C-Si光电二极管结构的运输性能影响

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Current-voltage characteristics, photosensitivity, frequency dependence of impedance, and electron beam induced current were measured for Al/porous silicon/c-Si structures with porous silicon (PS) layers of 60 and 80

机译：对具有60和80的多孔硅（PS）层的Al /多孔硅/ C-Si结构测量电流 - 电压特性，光敏，阻抗的频率依赖性和电子束感应电流

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《Symposium on materials and devices for silicon-based optoelectronics》|1998年||共6页
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L.A.Balagurov; A.F.Orlov; E.A.Petrova; D.G.Yarkin; S.Ya. Andryushin; Materials Research Society;
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3. Investigation of structural and electrical properties of p-CuPc/c-Si and p-CuPc/a-Si/c-Si hybrid photodiodes prepared by CSP technique [J] . B. Tatar, D. Demiroglu, M. UErgen Microelectronic Engineering . 2014,第auga期

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4. Effect of high concentrationof defect states at PS/c-Si heterointerfacer on transport properties of Al/PS/c-Si photodiode structure [C] . L.A.Balagurov, A.F.Orlov, E.A.Petrova, Symposium on materials and devices for silicon-based optoelectronics . 1998

机译：PS / C-Si异化表面高浓度缺陷态对Al / PS / C-Si光电二极管结构的运输性能影响
5. The Investigation of the Electronic Properties of Si Based Heterojucntions: A First Principle Study of a-Si:H/c-Si and GaP/Si Heterojunctions [D] . Meidanshahi, Reza Vatan 2019

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6. A novel human c-sis mRNA species is transcribed from a promoter in c-sis intron 1 and contains the code for an alternative PDGF B-like protein. [O] . R P Dirks, C Onnekink, H J Jansen, 1995

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7. Photoluminescence and structure properties from μc-Si:H and μc-Si:H-PS samples [O] . P.J. Ventura, M.F. Cerqueira, M.C. Carmo, 1997

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Effect of high concentrationof defect states at PS/c-Si heterointerfacer on transport properties of Al/PS/c-Si photodiode structure

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