Removal of Electrode Polymer by Plasma Clean After SOG Etch Back Process

摘要

High process pressure and low CF_4/CHF_3 gas ratio have been identified to be the dominant factors of achieving excellent planarization of SOG etch back process. However, the process induces serious polymer which continuously deposits on the upper electrode during SOG etch back process. Finally planarity is jeopardized and contact resistance increases on the production wafer due to chamber condition change.