NON-CONTACT SILICON EPILAYER AND SUBSURFACE CHARACTERIZATION WITH UV/MM WAVE TECHNIQUE

摘要

Carrier lifetimes and interface recombination velocities in p/p~+ and n/n+~ Si epitaxial wafers are determined from the photoconductivity decays (PCDs) measured using UV/mm-wave technique. Mo and Fe are found in p/p+ Si epitaxial wafers. Gate oxide integrity (GOI) is not dependent on roughness of R_(rms) (root-mean-square surface roughness) 0.097-0.247 ran but dependent on subsurface damage induced by chemical mechanical polishing (CMP). Photoconductivity amplitude (PCA) signal measured by the UV/mm-wave technique correlates closely the gate oxide integrity yield. CMP induced by subsurface damage is removed by SCI cleaning and the procedure is monitored by the UV/mm-wave technique. Lifetimes in a denuded zone (DZ) and intrinsic gettering (IG) layer are determined from the PCA signal measured using the UV/mm-wave technique.