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NONLINEAR EFFECTS IN BULK SEMICONDUCTOR WAVEGUIDE SWITCHES

机译:散装半导体波导开关中的非线性效应

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Nonlinear waveguide structures with grating couplers may operate as sensitive and contrasted alloptical switches (with threshold refractive index changes as low as ≈10~(-3)). III-V materials exhibit high nonlinearities around their bandgap edge and are good candidates for optical switching. However, as these material absorption (n") and nonlinear coefficients vary very rapidly near their bandgap edge, it is important to measure them in-situ to define operating conditions and coupler characteristics.In these materials, various nonlinear phenomena can be observed, which depend on the material and device properties and on the time scale under study.
机译:具有光栅耦合器的非线性波导结构可以作为敏感和对比的局部开关(具有低于≈10~(-3)的阈值折射率而变化)。 III-V材料在其带隙边缘周围表现出高的非线性,并且是用于光学切换的良好候选者。然而,由于这些材料吸收(n“)和非线性系数在其带隙边缘附近变化非常迅速,因此可以在原位测量它们以定义操作条件和耦合器特性是重要的。在这些材料中,可以观察到各种非线性现象,这取决于材料和设备属性以及在研究下的时间尺度。

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