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Influence of Substrate Temperature and Plasma Power Density on the Properties of Plasma-Assisted Chemical Vapour Deposited Titanium Nitride

机译:基板温度和等离子体功率密度对等离子体辅助化学气相沉积氮化钛性能的影响

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Titanium nitride films deposited onto high speed steel substrates by plasma-assisted chemical vapour deposition (PACVD) from TiCl{sub}4, H{sub}2, N{sub}2, and Ar gas mixtures have been investigated. The substrate temperature was varied between 250 and 550°C via the plasma power density or via an additional electrical heater. The influence of temperature and plasma power density on the morphology, chemical composition, hardness and adhesion of the coatings was studied. At a temperature of 500°C different plasma power densities caused changes of the morphology of the coatings. At low plasma power densities fine grained polycrystalline layers were observed. A significant change from coarse to fine grained structures was also observed with decreasing deposition temperature. Scratch test results indicate that coatings deposited at a given substrate temperature with lower plasma power density showed increased values of the critical load.
机译:通过等离子体辅助化学气相沉积(PIPVD)从TiCl {sub} 4,h {sub} 2,n {sub} 2的钛氮化钛膜沉积在高速钢基材上。基板温度经由等离子体功率密度或通过附加电加热器在250和550℃之间变化。研究了温度和等离子体功率密度对涂料的形态,化学成分,硬度和粘合性的影响。在500°C的温度下,不同的等离子体功率密度导致涂层形态的变化。在低等离子体功率密度下,观察细粒的多晶层。还观察到沉积温度降低,也观察到从粗粒细粒结构的显着变化。划痕试验结果表明,在给定的基板温度下沉积的涂层,具有较低的等离子体功率密度显示出临界负荷的增加的值。

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