Mathematical Modelling of Hot-Wall and Cold-Wall Reactors for Chemical Vapour Deposition

摘要

After a long period of time during which CVD industrial reactors have been developed by empirical methods, theoretical analysis and numerical modelling of their behaviour have opened new possibilities for practising engineers. Three different models elaborated to describe the behaviour of CVD reactors are successively presented. They correspond to different complexity degrees of the phenomena involved in CVD operations. For CVD in the horizontal tubular hot-wall reactor, two models are proposed: CVDl for negligible gas phase phenomena and CVD2 for non-negligible homogeneous reactions. For non-isothermal reactors, a more general code (ESTET-CVD) has been elaborated to solve first, Navier-Stokes equations and the energy balance and in a second step, the mass transport problem with homogeneous and heterogeneous chemical reactions. For each model, some examples of application are given for thin layer deposition by CVD in microelectronics industry.