Performance of thin film transistors on unhydrogenated in-situ doped polysislicon films obtained by solid phase crystallization

摘要

Low Temperature Unhydrogenated in-situ doped polysilicon Thin Film Transistors (LTUTFT) are made through two types of four-mask aluminium gate process. Silicon layers are elabroated by a Low Pressure Chemical Vapor Deposition (LACVD) method and crystallized by a thermal annealing. Source and drain regions are in-situ doped. An Atmospheric Pressure Chemical Vapor Deposition (APCVD) silicon dioxide ensures the gate insulation. Two structures A and B are fabricated, the difference is that for sample B the undoped/doped polysisilicon layer interface is suppressed.