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Preparation of epitaxial and olycrystalline La_0.8Sr_0.2MnO_3 films by dipping-pyrolysis process

机译:通过浸出热解过程制备外延和Olycrystalline La_0.8SR_0.2MNO_3薄膜

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The films of La_0.8Sr_0.2MnO_3 (LSMO) were prepared on single-crystal SrTiO_3(100) and polycrystalline yttria-stabilized zirconia (YSZ) substrates by dipping-pyrolysis process using metal naphthenates as starting materials. The crystallinity, grain alignment, morphology and electric properties of the films were compared. Epitaxial films were found to grow on SrTiO_3, heat-treated at 1200 deg C, by x-ray diffraction, and to exhibit very smooth surfaces by SEM and AFM observations. on the other hand, the surfaces of ther polycrystalline films grown on YSZ consisted of round-shaped LSMO grains. The resistivity of the epitaxial films was about two orders of magnitude lower than that of the polycrystalline films prepared under the same conditions. Preparation of epitaxial LSMO films on SrTiO_3(110) is also presented.
机译:通过使用金属辛烷酯作为起始材料,在单晶SRTIO_3(100)和多晶yTTRIA稳定的氧化锆(YSZ)底物上制备LA_0.8SR_0.2MNO_3(LSMO)的薄膜。比较薄膜的结晶度,颗粒对准,形态和电性能。发现外延薄膜在SRTIO_3上生长,通过X射线衍射在1200℃下热处理,并通过SEM和AFM观察表现出非常光滑的表面。另一方面,在YSZ上生长的多晶膜的表面由圆形的LSMO晶粒组成。外延膜的电阻率大约比在相同条件下制备的多晶膜的电阻率大约两个数量级。还提出了在SRTIO_3(110)上的外延LSMO薄膜的制备。

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