In this study, the Y_2O-3 films on p-type Si(100) have been fabricated by UHV reactive ionized cluster beam deposition(r-ICB) systems. The crystallinity of the films was investigated by glancing X-ray diffraction (GXRD) and in-situ reflection of high energy electron diffraction (RHEED) analyses. The results show that the preferentially oriented crystallinity of the films was increased with acceleration voltages as well as substrate temperatures. Especially, at the substrate temperature of 700 deg C and the acceleration voltage of 5kV, the Y_2O_3 films grow epitaxially in direction of Y_2O_3(110)//Si(100). The characteristics of Al/Y_2O_3/Si MIS structure were obtained by C-V, and I-V measurements. The breakdown field strength of the epitaxially grown films increases up to 2MV/cm without any interface silicon oxide layer, and the dielectric constant is found to be epsilon = 15.6 these results demonstrated that the yttrium oxide films have potential application to the gate insulator of the future VLSI/ULSI devices.
展开▼
