Formation of aluminum films on silicon by ion beam deposition: A comparison with ionized cluster beam deposition

摘要

The direct ion beam deposition (IBD) technique has been used to study the formation of oriented aluminum films on single crystal silicon substrates. In the IBD process, thin film growth is accomplished by decelerating a magnetically-analyzed ion beam to low energies (10--200 eV) for direct deposition onto the substrate under UHV conditions. The energy of the incident ions can be selected to provide the desired growth conditions, and the mass analysis ensures good beam purity. The aluminum on silicon system is one which has been studied extensively by ionized cluster beam (ICB) deposition. In this work, we have studied the formation of such films by IBD with emphasis on the effects of ion energy, substrate temperature, and surface cleanliness. Oriented films have been grown on Si(111) at temperatures from 40(degree) to 300(degree)C and with ion energies from 30 to 120 eV per ion. Completed films were analyzed by ion scattering, x-ray diffraction, scanning electron microscopy, and optical microscopy. Results achieved for thin films grown by IBD are compared with results for similar films grown by ICB deposition. 15 refs., 3 figs.