Novel photonic device structures by using thermal rapid annealing-induced disordering

摘要

Experimental results of disordering GaAlAs/GaAs MQW under different rapid thermal annealing (RTA) conditions are presented and discussed. Two kinds of novel device structures based on such technique are then proposed and fabricated. First, a laser diode with window regions for high power operation is designed and fabricated. The maximum output power of such a device shows an increase by 18% over laser diodes without window regions. Then a transverse mode controlled laser structure realized using RTA technique. A stable single transverse mode operation is obtained up to 4 times the threshold current.