Nano-field-effect-microscopy of electrical inhomogeneities on InGaAs surfaces

摘要

The imaging of electrical surface inhomogeneities of a p-doped InGaAs layer is performed by means of a scanning force microscope with a biased tip acting as an extremely small electrode opposite to the semiconductor surface. The resulting locally in-duced band bending underneath the tip depends on tip bias and on the electronic properties of the surface. Variation of the band bending due to changes of the electronic properties modulates a current through the layer allowing spatially resolved determination of elec-trical inhomogeneities of the surface by measuring the current change.