High-resolution electron microscope analysis of (AlAs)n(GaAs)m short-period superlattices in <110> and <100> projections

摘要

(AlAs)3(GaAs)7 short period superlattices and AIq 6Gao 4As/GaAs layer structures have abrupt and flat AyjaAs on GaAs interfaces whereas the GaAs on AlxGaj.xAs interfaces show a transition 2-3 cation layers thick. These results are obtained by visual inspection from <110> high resolution images for the imaging conditions: -10nm fe5nm and 10nm tsl4nm at 200kV in a JEOL 4000EX microscope. Quantitative high resolution images in < 100 > projection at 400kV from the same specimen corroborate these results