We describe a new fabrication technology for silica-based integrated optical components that employs electron irradiation to modify the refractive index of an amorphous SiO$-2$/ substrate. An asymmetric planar waveguide has been fabricated with this method, with a guide depth of approximately 5 $mu@m and a core-cladding index difference on the order of 10$+$MIN@3$/. The guide is single-moded over the entire visible spectrum, exhibiting losses of less than 12 dB/cm.
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机译：我们描述了一种新的制造技术，用于基于二氧化硅的集成光学元件，采用电子照射来改变无定形SiO $ -2 $ /衬底的折射率。已经用这种方法制造了不对称平面波导，引导深度约为5 $ MU @ M和核心包层指数差，大约为10 $ + $ MIN @ $ /。该指南在整个可见光谱上单模式，表现出小于12dB / cm的损耗。
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