Fabrication of Optical Channel Waveguides in the GaAs/AlGaAs System by MeV Ion Beam Bombardment

摘要

Optical channels have been formed in selectively masked planar GaAs/ AlGaAs waveguide structures using 10 MeV oxygen, 8 MeV carbon, and 8.5 MeV As ions. Implantation at different temperatures appears to have a direct effect on the propagation mode losses. Single-mode operation at 1.3 micrometers was observed from all the optical channels fabricated with O and C ions. The As ions were implanted into a different multiple quantum well (MQW) structure that was characterized at 905 nm. The optical characterization results provide insight as to which ion beam parameters are best suited to optimize this fabrication process.