Growth of 105k(BiPb)2Sr2Ca2Cu3O10 films on MgO by the pulsed laser deposition technique

摘要

To compensate for the loss of Pb during the preparation of BiSrCaCuO films we have deposited layers of PbO as part of a multilayer sandwich structure with BiPbSrCaCuO using the pulsed laser deposition technique. We have carefully optimized three parameters, namely the substrate temperature, post annealing temperature, and post annealing duration in order to produce the highest content of the 2223 phase in the films. By using a substrate temperature of 250$DGR@C and ex-situ annealing at 854$DGR@C for 15 hours in air we have produced highly c-axis oriented films which comprises some 95% 2223. These films typically exhibit T$-c$/ values of 105.5 K with associated critical current density of 2.5 $MUL 10$+4$/ A/Cm$+2$/ at 70 K.