Wet chemical etching mechanism of silicon

摘要

We review what can be said on wet chemical etching of single crystals from the viewpoint of the science of crystal growth. Starting point is that there are smooth and rough crystal surfaces. The kinetics of smooth faces is controlled by a nucleation barrier that is absent on rough faces. The latter therefore etch faster by orders of magnitude. The analysis of the diamond crystal structure reveals that the {111} face is the only smooth face in this lattice-other faces might be smooth only because of surface reconstruction. In this way we explain the minimum of the etch rate in KOH:H/sub 2/O in the 001 direction. Two critical predictions concerning the shape of the minimum of the etch rate close to 001 and the transition from isotropic to anisotropic etching in HF:HNO/sub 3/ based solutions are tested experimentally. The results are in-agreement with the theory.