High-responsivity UV photoconductors based on GaN epilayers

摘要

This paper describes a new UV sensitive photoconductive detector based on gallium nitride (GaN) material. Data is presented on devices fabricated over the past several months. These devices have a high responsivity between 200 to 360 nm with a sharp long wavelength cutoff at 360 nm. The detectors have measured gains in excess of six thousand and frequency responses of greater than 100 Hz. The devices have measured dynamic ranges of over four orders of magnitude and operate with bias voltages of 5 to 10 volts. Device designs are shown that can be utilized in the development of a large monolithic focal plane for UV imaging.