首页> 外文会议>Design, Automation amp;amp;amp; Test in Europe Conference amp;amp;amp; Exhibition >Detailed Placement for IR Drop Mitigation by Power Staple Insertion in Sub-10nm VLSI
【24h】

Detailed Placement for IR Drop Mitigation by Power Staple Insertion in Sub-10nm VLSI

机译:Sub-10nm VLSI中电动钉插入的IR降消的详细安置

获取原文

摘要

Power Delivery Network (PDN) is one of the most challenging topics in modern VLSI design. Due to aggressive technology node scaling, resistance of back-end-of-line (BEOL) layers increases dramatically in sub-10nm VLSI, causing high supply voltage (IR) drop. To solve this problem, pre-placed or post-placed power staples are inserted in pin-access layers to connect adjacent power rails and reduce PDN resistance, at the cost of reduced routing flexibility, or reduced power staple insertion opportunity. In this work, we propose dynamic programming-based single-row and double-row detailed placement optimizations to maximize the power staple insertion in a post-placement flow. We further propose metaheuristics to improve the quality of result. Compared to the traditional post-placement flow, we achieve up to 13.2% (10mV) reduction in IR drop, with almost no WNS degradation.
机译:电力传递网络(PDN)是现代VLSI设计中最具挑战性的主题之一。由于攻击性技术节点缩放,后端线(BEOL)层的电阻在Sub-10nm VLSI中急剧增加,导致高电源电压(IR)下降。为了解决这个问题,预先放置或放置后的电源钉插入引脚接入层中,以连接相邻电源轨并降低PDN电阻,以降低路由灵活性,或降低电源钉插入机会。在这项工作中,我们提出了基于动态编程的单行和双排详细放置优化,以最大化后放置流程中的电源钉插入。我们进一步提出了美术学,以提高结果质量。与传统的放置流程相比,我们达到IR降低的13.2%(10mV),几乎没有WNS劣化。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号