首页> 外国专利> Mitigation of electromigration, inrush current effects, IR voltage drop, and jitter by insertion of a matrix of metal lines and vias

Mitigation of electromigration, inrush current effects, IR voltage drop, and jitter by insertion of a matrix of metal lines and vias

机译:通过插入金属线和过孔矩阵来减轻电迁移,浪涌电流影响,IR压降和抖动

摘要

Integrated circuits and methods of manufacturing such circuits are disclosed herein that feature metal line-via matrix insertion after place and route processes are performed and/or completed for the integrated circuit's layout. The metal line-via matrix consists of one or more additional metal lines and one or more additional vias that are inserted into the integrated circuit's layout at a specific point to lower the current and current density through a first conductive path that has been determined to suffer from electromigration, IR-voltage drop, and/or jitter. Specifically, the metal line-via matrix provides one or more auxiliary conductive paths to divert and carry a portion of the current that would otherwise flow through the first conductive path. This mitigates electromigration issues and IR-voltage drop along the first conductive path. It may also help alleviate problems due to jitter along the path.
机译:本文公开了集成电路和制造这种电路的方法,其特征在于,在执行和/或完成用于集成电路布图的布局和布线过程之后,插入金属线通孔矩阵。金属线孔矩阵由一个或多个附加金属线和一个或多个附加通孔组成,它们在特定点插入集成电路的布局中,以降低通过第一导电路径的电流和电流密度,该电流已被确定会受到影响电迁移,IR压降和/或抖动引起的。具体地,金属线孔矩阵提供一个或多个辅助导电路径,以转移并承载否则会流过第一导电路径的一部分电流。这减轻了沿着第一导电路径的电迁移问题和IR电压降。它还可以帮助缓解由于路径抖动引起的问题。

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